SEMICONDUCTOR WAFER, MANUFACTURE THEREOF, AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING IT

摘要

PROBLEM TO BE SOLVED: To provide a round wafer such that the position and crystallographic axis direction may be identified. SOLUTION: A manufacturing method of a round wafer 1 includes a longitudinal groove forming process for providing a longitudinal groove 12 in a predetermined crystal surface orientation of a block 11 ground in a columnar shape from a semiconductor ingot, a slicing process for cutting a thin plate 13 having a V-groove 14 from the block provided with the longitudinal groove, a singular property part forming process for forming a melting mark 18 having different property from other parts by irradiating the inner side of the V-groove of the thin plate with a laser 16, and a characteristic part forming process for removing the V-groove, then planarizing the main surface of the melting mark 18 and thus locally forming a characteristic part 5 having a flat surface and a different inner lattice strain 19 from the other parts, on a round semiconductor substrate 2. Thus, the round wafer may be aligned by detecting the characteristic part. With this round wafer, disorder in gas flow and thermal stress dislocation may be prevented at the time of IC manufacturing. Since the characteristic part has the inner property differing only locally, no deterioration in yield is generated.