| 摘要 |
PROBLEM TO BE SOLVED: To realize high integration without lowering the driving capability of a transistor, by forming a source/drain region on one sidewall of each of a plurality of V-shaped grooves, forming a channel region on the other sidewall, and forming a plurality of gate electrodes on the plurality of V-shaped grooves in a direction of crossing the V-shaped grooves via gate insulating films. SOLUTION: An oxide film is formed on the surface of a P-type silicon substrate 21. After a photoresist film is formed on the oxide film, anisotropic wet etching is performed using the photoresist film as a mask, thus forming a plurality of V-shaped grooves 22 in parallel. On one sidewall 22a of each of the V-shaped grooves 22, an N-type source/drain region 23 is formed. Across the plurality of V-shaped grooves 22, a plurality of gate electrodes 24 are formed via gate insulating films 25 in a direction perpendicular to the V-shaped grooves 22. Thus, high integration may be realized without lowering the driving capability of a transistor. |
