| 摘要 |
PROBLEM TO BE SOLVED: To conduct three dimentional form simulation on a semiconductor device in a short period of time by sharply reducing the memory capacity required for the simulation. SOLUTION: A margin region, where prescribed margin length is added, is provided on the boundary part of an input mask pattern split part and a mask pattern data and on the circumference of a mask pattern, the above- mentioned region is plotted three-dimensionally, other region is brought in the state of two dimensional data, and they are housed in a data housing part 3b. The two dimensional data is treated by a two dimensional configuration simulation treatment part 3c as two dimensional configuration, the three dimensional data is treated by a three dimensional configuration simulation treatment part 3d as a three dimensional configuration, the two dimensional configuration is treated into the three dimensional configuration, it is combined with the three dimensional configuration, which is brought into the state of three dimensional data, by the three dimensional configuration simulation treatment part 3d, and a configuration plotted three-dimensionally is indicated on an indication device 4. |
