发明名称 PARTICLE MONITOR METHOD AND WORK TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a work treatment apparatus capable of accurately detecting a particle generating mechanism in a wafer process. SOLUTION: A work treatment, apparatus has a treatment chamber 1 applying a predetermined treatment to a semiconductor wafer W, a plurality of laser beam sources 4a, 4b, 4c arranged to the treatment chamber 1 in an up and down direction and emitting laser beams into the treatment chamber 1 while scanned in a horizontal direction, the detector 8 arranged in the treatment chamber 1 to detect the laser beams L scattered by the particles P in the treatment chamber 1 and laser beam permeable windows 6a, 6b, 6c preventing the detection of straightly advancing laser beams L by the detector 8. A light wavelength separation filter 10 introducing only the laser beams L into the detector 8 is arranged to the treatment chamber 1.
申请公布号 JPH09243549(A) 申请公布日期 1997.09.19
申请号 JP19960049391 申请日期 1996.03.07
申请人 HITACHI LTD 发明人 NOZOE MARI;IKODA MASAMI
分类号 G01N15/14;G01N21/47;G03F7/20;H01L21/027;H01L21/66;(IPC1-7):G01N15/14 主分类号 G01N15/14
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