| 摘要 |
PROBLEM TO BE SOLVED: To reduce a probability that overflow electrons reach from an active layer to a (p) side electrode structure part and to prolong the file of a semiconductor light-emitting device by a method wherein the distance from the active layer to a multilayer semiconductor part is set at a specified value or higher. SOLUTION: An active layer 7, a p-type clad layer 9 and an n-type clad layer 5, which are arranged holding this active layer 7 between the layers 9 and 5, and a (p) side electrode structure part 12 having a multilayer semiconductor part, which is formed by forming a plurality of kinds of layers comprising at least a constituent material thin film consisting of a ZnFe thin film, are formed. The distance from the layer 7 to a multilayer semiconductor part 13 is set in 3μm or longer. Thereby, as the arrival of overflow electrons to turn from the layer 7 to the structure part 12 can be inhibited, the number of the electrons, which recombine with holes in here, the structure part 12, can be effectively reduced and at the same time, a reduction in light absorption can be contrived and the prolongation of the life of a semiconductor light-emitting device becomes possible. |
