| 摘要 |
PROBLEM TO BE SOLVED: To suppress the increase of resistance and to make the mask effect of preventing the oxidation of the surface layer part of a gate electrode perform sufficiently by increasing the thickness of a silicon nitride film on the insulating film forming a thin RTN nitride films on the surfaces of an accumulating electrode and an insulating film. SOLUTION: A silicon nitride film 31 is deposited on all surface of a P type silicon substrate 21 and the all surface of an RTN nitride film 30 on an accumulating electrode 28 is covered with the nitride film 31. After a thin oxide film is grown and a polycrystalline silicon film is grown on a silicon nitride film 31, it is doped to be conductive. A dielectric film 32 that comprises the RTN nitride film, the silicon nitride film and the thin oxide film is formed by patterning the polycrystalline silicon film, the thin oxide film, the silicon nitride film and the RTN nitride film, and a plate electrode 33 is formed. With this, the mask effect of the oxidation prevention of the surface layer part of an N<+> diffusion layer and a gate electrode is performed sufficiently at healing oxidation. |
