| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain the wiring layer which has a high resistance to thermal and mechanical stress through a simple process in which the thermal process is carried out after the anode oxidation process of Al. |
| 申请公布号 |
JPS52120779(A) |
申请公布日期 |
1977.10.11 |
| 申请号 |
JP19760038059 |
申请日期 |
1976.04.05 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
HIGUCHI KOUICHI;TAKAHATA KOUICHIROU;KUBOTA TAKEHIKO |
| 分类号 |
H01L21/3205;H01L21/02;H01L21/28 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
