发明名称 METHOD FOR DEVELOPING RESIST
摘要 PROBLEM TO BE SOLVED: To make it possible to form fine resist patterns with good accuracy and to effectively prevent a development defect by executing the discharge of a developer dividely to plural times. SOLUTION: A wafer 1 formed with the exposed resist to be developed is held on a wafer chuck 2 and the wafer chuck 2 is rotated by means of a motor 4. Next, the developing nozzle 6 at the front end of a developing nozzle arm 5 is moved near to the center of the wafer 1 by the developing nozzle arm and the developer is discharged onto the wafer 1 from the developing nozzle 6. After the discharge of the developer is executed once, the discharge of the developer is stopped and the rotation of the wafer 1 is stopped. The wafer 1 is rotated again after the stop for the arbitrary time and immediately thereafter, the rotation of the wafer 1 is stopped. The rotation and stop of the high acceleration of the wafer 1 are repeated the required number of times at every arbitrary time. As a result, the microbubbles adhered on the surface of the resist on the wafer 1 at the time of building up by the discharge of the developer are removed outside the wafer 1.
申请公布号 JPH09244258(A) 申请公布日期 1997.09.19
申请号 JP19960078314 申请日期 1996.03.06
申请人 SONY CORP 发明人 HIRANO HARUNOBU;KUSANO YASUSHI
分类号 G03F7/30;H01L21/027;(IPC1-7):G03F7/30 主分类号 G03F7/30
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