| 摘要 |
PROBLEM TO BE SOLVED: To enable low-voltage driving and an unlimited number of times of rewriting, by forming specified ferroelectrics in an insulating film portion of a MOS FET and causing spontaneous polarization of the ferroelectrics so as to store data. SOLUTION: A source region 2 and a drain region 3 are formed on a silicon wafer 1, and an SiO3 insulating film 4 is stacked between the source region 2 and the drain region 3. A ferroelectric film 8 is formed on the portion of the insulating film 4, and spontaneous polarization of the ferroelectric film 8 is caused, thus storing data. In this case, the ferroelectric film 8 is made of (SrXBi1- X)Bi2 (TaYNb1- Y)2 OZ, where 0.4<=<1, 0<=Y<=1, and Z is the total of the number of oxygen atoms accompanied by each metal element. Thus, lowvoltage driving may be realized and the number of times of rewriting may be unlimited. |
