| 摘要 |
PROBLEM TO BE SOLVED: To make the absorption spectrum of discrete light and the selectivity in the polarizing direction of light reflect in a semiconductor optical device to actuate the optical element by a method wherein the thickness of an upper barrier layer formed of a second semiconductor layer is formed specified times thicker than the lattice constant and a magnetic material thin film is provided on this barrier layer. SOLUTION: A semiconductor optical element having a light emission function is constituted into a structure, wherein an active layer of the optical element is formed of a quantum well layer 1, which consists of a first thin film-shaped semiconductor layer, and upper and lower barrier layers 2 and 3, which hold this semiconductor layer between them and respectively consist of second and third semiconductor layers having an energy forbidden band width wider than that of the first semiconductor layer, the thickness of the upper barrier layer 2 formed of the second semiconductor layer is formed 1 to 15 times thicker than the lattice constant and a magnetic material thin film 4 is provided on this layer 2. Thereby, the optical device, which operates while a magnetic field is applied to the active layer, can be realized without a device for applying the magnetic field to the active layer from the outside. |
