| 摘要 |
PROBLEM TO BE SOLVED: To form a tantalum oxide thin film that is superior in workability, uniform and has an excellent characteristic by using a tantalum compound shown by a (J) formula as the material for the tantalum oxide thin film. SOLUTION: A material for forming a tantalum oxide thin film is a tantalum compound shown by a formula. An m indicates the integer of 2 to 4, R' indicates an alkyl group with the carbon number of 1 to 2 and Me indicates a methyl group in the formula. The materiel for forming the tantalum oxide thin film is filled inside a vaporizing chamber 3 and vapor pressure is kept constant. polysilicon is used for a substrate 5 inside a reaction vessel 4, a carrier gas 1 is blown into the vaporizing chamber 2, a gas accompanied by a material is introduced into the reaction vessel 4, oxygen as an oxidizing gas is blown into the reaction vessel 4, an exhaust gas 5 from the reaction vessel 4 is removed from the exhaust hole 6 and the tantalum oxide thin film is formed on a wafer. With this, the tantalum oxide thin film that is superior in the workability, uniform and has the excellent characteristic can be formed. |
