| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a ferroelectric memory device on a semiconductor wafer. SOLUTION: This method is started by forming CMOS transistors 37a, 37b, 40 and 42. A hydrogen annealing, which uses 4 to 5% of hydrogen with the remnant of nitrogen, is executed on the transistors to reduce dangling atomic bonds in the interfaces between gate dielectric materials of the transistor 37a and the like and a substrate. Then, a silicon nitride layer 48 is adhered to the upper parts of the transistors and the back surface of the wafer substrate 10 to fence substantially the effect of the hydrogen annealing to the transistor 37a and the like in the layer 46. Ferroelectric capacitor layers 54, 58, 60, 62 and 64 are formed on a nitride layer 48 and the layer 54 and the like are subjected to oxygen annealing in a pure O2 atmosphere. The layer 48 contains the hydrogen, which is used in the hydrogen annealing which is executed on the transistors, whereby damage to a ferroelectric material is prevented from being generated. |
