| 摘要 |
PROBLEM TO BE SOLVED: To improve the operation speed of a semiconductor integrated circuit device by reducing the junction capacity between a semiconductor substrate and source and drain regions. SOLUTION: An n-type semiconductor region 9 and a p-type semiconductor region 12 being pocket regions are provided, respectively, in the source and drain regions of the PMOSFET's Qp1 , Qp2 , Qp3 , and NMOSFET's Qn1 , Qn2 , and Qn3 made on the main surface of a semiconductor substrate 1. In this case, this is so arranged that one end of the pocket region is positioned under the gate electrode 6 and that the other end is positioned on the side of that gate electrode 6 more than the center between the gate electrode 5 of the adjacent element and that gate electrode 6, that is, a region where pocket ions are not implanted is made at the center between the gate electrodes 6. The pocket region is made by oblique ion implantation, and the relation between the height h of the gate electrode 6 and the interval d between the gate electrodes 6 fulfills d>h/tanθ>d>2.
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