FIELD EFFECT TRANSISTOR AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To form a barrier against electron which flows from a Schottky contact layer into an ohmic contact layer by inserting a barrier layer whose power affinity is specific between a Schottky contact layer and an ohmic contact layer. SOLUTION: A barrier is formed against electron which flows from a Schottky contact layer 106 into an ohmic contact layer 108 by inserting a barrier layer (electron affinity of 0.1eV or more) 107 whose electron affinity is smaller than that of a Schottky contact layer 106 between the Schottky contact layer 106 and an ohmic contact layer 108. A difference of electron affinity appears as a conduction band discontinuityΔEc when the hetero junction of the Scohttky contact layer 106 and the ohmic contact layer 108 is formed and functions as an obstacle against electron since the conduction band of a material of smaller electron affinity is upper, and a barrier against electron which flows in can be formed.