| 摘要 |
PROBLEM TO BE SOLVED: To provide the vapor-phase growing method of a III-V group compound semiconductor thin film containing nitrogen by new growing atmosphere, which brings the increase in light emitting intensity of a semiconductor light emitting device. SOLUTION: A III-V group compound semiconductor is grown in the atmosphere of mixed gas, wherein the mixing ratio (r) of hydrogen and the single- atom molecule gas of the VIII-group element having the molecular weight (M) is 0.80 (M'-2)/(M-2)}<=r<=1.2 (M'-2)-(M-2)}. By this growing method, the III-V group compound semiconductor containing nitrogen, wherein the intensity ratio (I0 /I) of the photoluminescence intensity (I0 ) at a band end and the intensity (I) of the photoluminescence light emission having the central wavelength in the wavelength region of 550nm or more and 650nm or less is 10 or more, is grown. Of there semiconductors, the III-V group compound semiconductor layer, whose I0 /I is 20 or more is mate to be the light emitting layer. |
