| 摘要 |
PROBLEM TO BE SOLVED: To obtain an AlGaAs-based light emitting diode, which can be used at a wavelength shorter than 660nm. SOLUTION: In this diode, clad layers 3 and 5 of a double heterostructured AlGaAs epitaxial wafer are constituted of AlGaAs having the AlAs mixed- crystal ratio of 0.75 or more. Thus, the high-luminance light emission in the short wavelength region of 600-630nm can be performed. Furthermore, a window layer 6, whose AlAs mixed-crystal ratio is lower than the clad layer, is provided on the clad layer 5 on the PN junction side of the clad layers. Thus, the oxidation phenomenon at the surface of the wafer caused by the high AlAs mixed- crystal ratio is prevented. For the respective layers, which are sequentially formed on the GaAs substrate 1, a first layer 2 and a third layer 4 and the second layer 3 and the fourth layer 5 are grown and formed by using the same common growing solution, respectively. Thus, the reduction of the manufacturing cost is also achieved. |
