| 摘要 |
<p>A dry etching method is suitable for fabricating ferroelectric RAMs, a non-volatile memory, having a central core structure of PZT (a strong dielectric material) sandwiched between two electrodes (Ir/IrO2). The method is applicable to dry etching of a monolayer or laminated structure of a combination of ferroelectric films such as PZT-based, Sr-based, or Bi-based film as well as electrode structures of Ir or Pt/Ti group materials. The method utilizes a gaseous mixture of chloride-based gases such as BCl3 and Cl2, or SiCl4, or fluoride-based gases such as CF4, or C2F6 or a gaseous mixture of chloride- and fluoride-based gases, or bromide-based gases such as HBr. The method produces cavities having a high aspect ratio, free from products of reaction which are usually deposited on the cavity surfaces produced by the conventional dry etchants.</p> |
