发明名称 |
Electrode connections for semiconductor devices |
摘要 |
A method for manufacturing a semiconductor device including forming an electrode on a part of a semiconductor substrate, depositing an insulating film on the semiconductor substrate and on the electrode, and forming a contact hole penetrating through the insulating film to expose a part of the electrode; forming a barrier metal layer on the electrode in the contact hole, on the internal side surface of the contact hole, and on the surface of the insulating film; and depositing a metal layer on the barrier metal layer and patterning the metal layer and the barrier metal layer to form a wiring layer wherein the barrier metal layer comprises a metal that does not form an intermetallic material by solid state diffusion with either of the electrode and the metal layer even at elevated temperatures. |
申请公布号 |
GB2279498(B) |
申请公布日期 |
1997.09.17 |
申请号 |
GB19930023286 |
申请日期 |
1993.11.11 |
申请人 |
* MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOSHIHIKO * SHIGA;RYO * HATTORI;TOMOKI * OKU |
分类号 |
H01L21/28;H01L21/768;H01L23/485;H01L23/522;H01L23/532;H01L29/43;H01L29/45 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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