| 摘要 |
PURPOSE:To form a resist pattern high in resolution with high sensitivity and antihalation effect without deteriorating resist performance according to prebaking conditions by incorporating a specified compound. CONSTITUTION:The photoresist composition contains at least one of the compounds represented by formula I in which each of R<1> and R<2> is 1 - 16 C alkyl, phenyl, aralkyl, cyclohexyl, alkoxyalkyl, tetrahydrofurfuryl, or H; R<3> is 1 - 8 C alkyl, acetyl, or H; R<4> is 1 - 4 C alkyl, halogen, alkoxy, or H; and R<5> is 1 - 4 C alkyl or H, thus permitting the obtained photoresist to be superior in line width controlability even on a highly reflective substrate, sensitivity, resolution, and sublimation resistance, and a fine pattern good in reproducibility to be obtained. |
