| 摘要 |
<p>To produce a surface-emitting laser, doped semiconductor material having a first conductivity mode is deposited to form a first mirror layer (15). A layer of semiconductor material is deposited on the first mirror layer to form an active layer (13), in the course of which a quantum well region (19) is formed, and a diffusion enhancing region (41) is formed by doping the semiconductor material of the active layer with an acceptor impurity to such a high concentration that holes induced in the quantum well region by the diffusion enhancing region predominate over electrons in the quantum well region by about one order of magnitude. Doped semiconductor material having a second conductivity mode is deposited on the active layer to form a second mirror layer (17). The laser comprises a first mirror layer (15), an active layer (13) including a quantum well region (19) and a diffusion enhancing region (41), and a second mirror layer (17). <IMAGE></p> |
