Ferroelectric element and method of producing the same

摘要

To provide a ferroelectric element that can be highly densely integrated having a high Pr and a small Ec by using a ferroelectric thin film (32) of the perovskite structure. A large distortion is imparted to the crystalline lattices of a ferroelectric thin film (32) of the perovskite structure by using in combination the elements having dissimilar ionic radii for the A-site that constitutes crystalline lattices, for the B-site and for the C-site that produces polarization, in order to obtain a ferroelectric element of a structure in which the ferroelectric thin film (32) exhibiting a high spontaneous polarization and a small coercive electric field is sandwiched by the electrodes (31, 33). <IMAGE>