发明名称 |
Semiconductor memory for increasing the number of half good memories by selecting and using good memory blocks |
摘要 |
A semiconductor memory has a plurality of memory arrays, and a plurality of selection circuits. Each of the memory arrays has a plurality of memory blocks. The selection circuits is provided to the memory arrays and is used to independently disable a defective memory block and select a normal memory block in the memory array. Therefore, the semiconductor memory enables to increase the number of partial good memories (half good memories: half capacity memory), and to increase a product yield.
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申请公布号 |
US5668763(A) |
申请公布日期 |
1997.09.16 |
申请号 |
US19960606819 |
申请日期 |
1996.02.26 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUJIOKA, SHINYA;HATAKEYAMA, ATSUSHI;MOCHIZUKI, HIROHIKO |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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