发明名称 Semiconductor memory for increasing the number of half good memories by selecting and using good memory blocks
摘要 A semiconductor memory has a plurality of memory arrays, and a plurality of selection circuits. Each of the memory arrays has a plurality of memory blocks. The selection circuits is provided to the memory arrays and is used to independently disable a defective memory block and select a normal memory block in the memory array. Therefore, the semiconductor memory enables to increase the number of partial good memories (half good memories: half capacity memory), and to increase a product yield.
申请公布号 US5668763(A) 申请公布日期 1997.09.16
申请号 US19960606819 申请日期 1996.02.26
申请人 FUJITSU LIMITED 发明人 FUJIOKA, SHINYA;HATAKEYAMA, ATSUSHI;MOCHIZUKI, HIROHIKO
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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