发明名称 |
METHOD FOR WORKING ORGANIC FILM |
摘要 |
PROBLEM TO BE SOLVED: To reduce a cost and to eliminate the need for a wet process by working an org. film only by the stage for irradiation with a laser. SOLUTION: The org. film substrate is irradiated with first pulse laser beams 1 of a pulse width within a range from 10μs to 20ms in the method for working fine holes on this film substrate, by which reaction of either the thermal decomposition based on the heating effect by the irradiation with the lasers or the generation of gas according to this thermal decomposition is induced in the insulating film. The org. film substrate is then irradiated with short pulse beams of a width of <=200ns expanded in the diameter of the beams for irradiation up to the spreading range of the thermally decomposed matter. |
申请公布号 |
JPH09239573(A) |
申请公布日期 |
1997.09.16 |
申请号 |
JP19960071435 |
申请日期 |
1996.03.01 |
申请人 |
NEC CORP;SUMITOMO METAL MINING CO LTD |
发明人 |
BERUGASEMU HABA;MORISHIGE YUKIO;ISHIKAWA KAZUYUKI |
分类号 |
B23K26/00;B23K26/14;B23K26/38;B29C35/08;B29C59/16;B41J2/16;B41M5/24;H01L21/28;H01L21/48;H01L23/14;H05K3/00;H05K3/46 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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