发明名称 Circuit detecting electric potential of semiconductor substrate by compensating fluctuation in threshold voltage of transistor
摘要 A substrate potential detection circuit includes a substrate potential detection unit including a first transistor having a gate and a source connected respectively to a ground line and a reference voltage line, a second transistor having a gate receiving a substrate potential and a drain connected to the ground, and a third transistor having a source connected to the drain of the first transistor and a gate and a drain connected in common to the source of the second transistor to form a detection output node; and a buffer circuit having a drive transistor and a current source, a gate and a source of the drive transistor being connected respectively to the detection output node and the reference voltage line and outputting a substrate detection voltage.
申请公布号 US5668487(A) 申请公布日期 1997.09.16
申请号 US19940358105 申请日期 1994.12.16
申请人 NEC CORPORATION 发明人 CHONAN, TORU
分类号 G11C11/413;G01R19/165;G11C5/14;G11C11/407;H01L21/822;H01L27/04;H03K19/094;(IPC1-7):H03K5/22 主分类号 G11C11/413
代理机构 代理人
主权项
地址