发明名称 |
Method of planarizing a layer of material |
摘要 |
A method of planarizing a layer of material having a pre-determined thickness above a circuit feature on a semiconductor device is provided. A first layer of material is formed atop the surface of the semiconductor substrate and circuit feature to a pre-determined thickness. A thin, continuous trace layer of doped silicon oxide material is formed atop the first layer, and then a second layer of material is formed atop the trace layer. The second layer is planarized, and planarization is terminated upon reaching the trace layer, thereby providing a semiconductor with a planar layer.
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申请公布号 |
US5668063(A) |
申请公布日期 |
1997.09.16 |
申请号 |
US19950447809 |
申请日期 |
1995.05.23 |
申请人 |
WATKINS JOHNSON COMPANY |
发明人 |
FRY, HOWARD WALLACE;LIGHTFOOT, KURT JAMES |
分类号 |
H01L21/304;H01L21/3105;H01L21/66;(IPC1-7):H01L21/465 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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