Semiconductor memory device allowing reduction of power consumed in a shared sense amplifier type sense amplifier

摘要

A semiconductor memory device 251 has a sense amplifier 7 of shared sense amplifier type. A switching signal generating circuit 253 is provided for application of control signals phi 1 and phi 2 to a control electrode of a connection transistor of sense amplifier 7. Switching signal generating circuit 253 applies control signals phi 1 and phi 2 which is boosted only for a prescribed time period after the rise of external /RAS signal to the control electrode of the connection transistor of sense amplifier 7. Therefore, as compared with the operation in which control signals phi 1 and phi 2 which are constantly boosted are applied, power consumption can be reduced.