发明名称 |
Method for fabricating multilayer semiconductor device |
摘要 |
A method for fabricating a multilayer semiconductor device according to the invention includes the steps of providing a conductive layer on a substrate; forming a barrier layer on the first conductive layer; forming an insulation layer on the barrier layer; selectively etching the insulation layer using the barrier layer as a stopper to form a through-hole; and selectively removing the barrier layer at the bottom of the through-hole from the conductive layer.
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申请公布号 |
US5668053(A) |
申请公布日期 |
1997.09.16 |
申请号 |
US19940364316 |
申请日期 |
1994.12.27 |
申请人 |
NEC CORPORATION |
发明人 |
AKIMOTO, TAKESHI |
分类号 |
H01L21/28;H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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