发明名称 |
Method of forming a resistor and integrated circuitry having a resistor construction |
摘要 |
A method of forming a resistor from semiconductive material includes, a) providing a substrate; b) providing a layer of semiconductive material over the substrate; c) providing a pair of openings into the semiconductive material layer; d) plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive pillars within the semiconductive material, the pair of pillars having semiconductive material extending therebetween to provide a resistor construction; and e) providing a conductive node to each of the electrically conductive pillars. An integrated circuit incorporating a resistor construction includes, i) a layer of semiconductive material; ii) a pair of electrically conductive pillars provided within the semiconductive material layer, the pair of pillars being separated from one another and thereby having a mass of the semiconductive material extending therebetween; and iii) an electrically conductive node in electrical connection with each of the respective conductive pillars. Alternately, a resistor is provided within a semiconductive substrate using different concentration diffusion regions.
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申请公布号 |
US5668037(A) |
申请公布日期 |
1997.09.16 |
申请号 |
US19960679705 |
申请日期 |
1996.07.11 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PRALL, KIRK;FAZAN, PIERRE C.;AHMAD, AFTAB;RHODES, HOWARD E.;JUENGLING, WERNER;PAN, PAI-HUNG;LOWREY, TYLER |
分类号 |
H01L21/02;H01L27/06;H01L27/08;(IPC1-7):H01L21/70 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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