| 摘要 |
The present invention provides a method for forming a field oxide layer without the use of the LOCOS process. Accordingly, the present invention provides a superior effect capable of increasing the active region and improving the integration of semiconductor devices, preventing the bird's beak from being generated. Also, in the present invention, since the width of the field oxide layer is the same as that of a spacer on the sidewall of the insulating layer, the area of the field oxide layer is minimized.
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