MEHRSCHICHTVERBINDUNG FÜR INTEGRIERTE SCHALTUNGSSTRUKTUR MIT ZWEI ODER MEHREREN METALLISCHEN LEITERSCHICHTEN UND VERFAHREN ZUM HERSTELLEN DERSELBEN

摘要

Construction of a novel multilayer conductive interconnection for an integrated circuit having more than one conductive layer is disclosed comprising a lower barrier layer (40) which may be in contact with an underlying silicon substrate (10) and comprising a material selected from the class consisting of TiW and TiN; an intermediate layer (50) of conductive metal such as an aluminum base metal; and an upper barrier layer (60) which may be in contact with a second aluminum base metal layer (80) and which is selected from the class consisting of TiW, TiN, MoSix and TaSi where x equals 2 or more.