| 摘要 |
<p>A semiconductor stack comprising pressure contact type semiconductor devices having different electrode diameters, which are interleaved either by cooling fins having water channels or by metal plates connected with electrodes. The cooling fin has a relatively thin wall (the distance from its surface to the water channel in it) on one side for contact with a semiconductor device having larger electrodes and a relatively thick wall on the other side for contact with a semiconductor device having smaller electrodes.</p> |
