| 摘要 |
<p>A first layer having the same conductivity as that of a CZ substrate and having nearly the same dopant concentration as that of the CZ substrate is vapor-grown directly on the substrate, after the gas is purged by changing the pressure, a second layer having the same conductivity as that of the substrate and having a dopant concentration which is about one-thousandth lower than that of the substrate is vapor-grown. Therefore, a single-crystal silicon thin film which contains no crystal fault and in which the dopant concentration abruptly changes at the boundary between the film and the high-concentration layer can be vapor-grown through a simple inexpensive process.</p> |
