| 摘要 |
<p>A method of fabricating a semiconductor device, the method comprising (i) forming at least two trenches (4, 7, 8) in a substrate, one of the trenches being wider than the other trench; (ii) depositing a layer of material (10, 16, 20) on the substrate including the trenches by a method of conformal deposition; and (iii) etching away part of the layer of material. The widths of the trenches and the thickness of the layer of material are chosen such that the material is etched away from the bottom of the wider trench (4) but not from the bottom of the narrower trench (7, 8).</p> |
