| 摘要 |
<p>A flash post exposure bake (Flash PEB) process for a diazonaphthoquinone sulfonate ester-novolak positive photoresist is described which offers significant advantages. This process uses a higher than conventional post exposure baking (PEB) temperature (≥130 °C) and a very short baking time (≤ 30 seconds) of the resist, preferentially over a bottom antireflective coating. It significantly improves the photoresist's resolution, process latitude, thermal deformation temperature, resist adhesion and plasma etch resistance.</p> |
