METHOD FOR FORMATION OF THIN FILM TRANSISTORS ON PLASTIC SUBSTRATES

摘要

A process for formation of thin film transistors (TFTs) on plastic substrates (10) replaces standard thin film transistor fabrication techniques, and uses sufficiently low processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors (20), dielectrics (11, 24) and metals (21, 22, 23) at low temperatures; crystallizing and doping semiconductor layers (20) in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.