发明名称 Titanium mono:phosphide layer formation
摘要 The invention relates to a method for producing a titanium phosphide layer, wherein initially a carrier is placed in a reactor. Subsequently, a TiN layer is deposited on the carrier by adding TiCl4 and NH3 in the reactor. The TiN layer is tempered by adding PH3 in the reactor immediately after the TiN layer has deposited in order to form the titanium monophosphide layer on the TiN layer.
申请公布号 DE19649684(C1) 申请公布日期 1997.09.11
申请号 DE19961049684 申请日期 1996.11.29
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE 发明人 FROESCHLE, BARBARA, DIPL.-CHEM., 89160 DORNSTADT, DE;LEUTENECKER, ROLAND, DIPL.-PHYS., 85259 WIEDENZHAUSEN, DE;RAMM, PETER, DR., 85276 PFAFFENHOFEN, DE
分类号 H01L21/285;C23C16/30;C23C16/34;C23C16/56;H01L21/28;H01L21/3205;(IPC1-7):C23C16/30 主分类号 H01L21/285
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