| 摘要 |
A light emitting element of gallium nitride compound semiconductor includes a dry etch-stop layer (6) which is provided on a cladding layer (5) overlying an active layer (4) and which has the same conductivity type as the cladding layer. Preferably, the etch-stop layer is a 1-5 nm thick InN layer. Also claimed are a light emitting element of gallium nitride compound semiconductor and a process for its production, the light emitting element having (a) a first multilayer semiconductor structure formed on a substrate (1) and including an active layer (4) embedded by first and second conductivity type cladding layers (3, 5); (b) a dry etch-stop layer (6) of second conductivity type, formed on the structure (a); and (c) a second multilayer semiconductor structure formed on the etch-stop layer.
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