| 摘要 |
PURPOSE:To improve insulation between crystals, by interposing an insulating region between a plurality of crystals which are made to grow on a piling surface. CONSTITUTION:Si single crystals 3 are made to grow and heaped on a surface of a substrate, and a surface oxidation layer 4 is formed on the single crystals 3, and dielectric isolation is performed between adjacent single crystals 3, and further a Si3N4 film 5 is heaped thereon to perform perfect dielectric isolation. Protruding parts of the single crystals 3 are flattened so as to remove the Si3N4 film 5 heaped on positions which exclude side surfaces of the single crystals 3 and spaces between the single crystals themselves, and a SiO2 oxidizing film 6 is formed on exposed crystal surfaces, and next the oxidizing film 6 on the Si3N4 film 5 is removed. In succession, selective heaping is performed between the Si3N4 film 5 and the SiO2 film 6, and polysilicon 7 is heaped on only the Si3N4 film 5 and flattened. Since the spaces between crystals are thus insulated from the Si3N4 film 5 and the polysilicon 7, insulation can improved. |
