| 摘要 |
PURPOSE:To obtain a silicon substrate excellent in electrical and photoelectric properties by a method wherein a buffer layer is interposed between a ceramic substrate and a crystalline silicon film so as to lessen contaminant impurities which migrate from a ceramic substrate to a crystalline silicon film and to enable crystals of large grain diameter to grow in the crystalline silicon film. CONSTITUTION:A buffer layer 2 of silicon nitride single layer film or silicon oxide.nitride intermcdiate compound single layer film is provided onto the surface of a ceramic substrate 1, and a silicon film is deposited thereon and melted into a crystalline silicon film 3. |
