| 摘要 |
The integrated device (1') has an N-type well region (3) formed in a P-type substrate (2), and an N<+> type contact ring (4) housed in the well region (3). The well region (3) forms respective capacitors (19, 20) with a conductive layer (7) superimposed on the substrate (2), and with the substrate (2) itself. The conductive layer (7) and the substrate (2) are grounded, and the contact ring (4) is connected to the supply, so that the two capacitors (19, 20) are in parallel to each other and, together with the internal resistance (21) of the well region, form a filter (24) for stabilizing the supply voltage. When connected to an input buffer stage (23) of the device (1'), the filter (24) provides for damping the peaks produced on the supply line of the input buffer by high-current switching of the output buffers. <IMAGE> |
