| 摘要 |
<p>PURPOSE: To reduce a leakage current in case of backward bias, by a method wherein the channel is made longer than the length of a gate electrode in the channel length direction, by forming a source.drain region by implanting impuri ties in a semiconductor layer by using an anodized gate electrode part as a mask. CONSTITUTION: Insulated gate type semiconductor devices 76, 77 are formed by laminating at least semiconductor layers 53, 54, insulating film layers 55, 57 and conductor layers 65, 66 on insulating substrates 51, 52. In this case, the semiconductor layers 53, 54 are formed as semiamorphous semiconductors. After gate insulating film layers 55, 57 are formed, gate electrode parts 56, 58 are formed of material capable of anodic oxidation. The surfaces of the gate electrode parts 56, 58 are subjected to anodic oxidation. By using the anodized gate electrode parts 65, 66 as masks, impurity ions which turn the semiconductor layers into P-type or N-type are implanted, and the source or drain region are formed. After that, heat treatment is performed.</p> |
