Blanket-selective deposition of cvd aluminum and reflectivity improvement using a self-aligning ultra-thin layer

摘要

The present invention relates generally to an improved apparatus and process to provide a thin self-aligning layer prior to forming a conducting film layer there over to improve the film characteristics and deposition coverage. In one aspect of the invention, a dielectric layer (32) is formed over a conducting or semiconducting layer (36) and etched to form an aperture (38) exposing the underlying conducting or semiconducting layer (36) on the aperture floor (42). An ultra-thin nucleation layer (34) is then deposited by either vapor deposition or chemical vapor deposition onto the field (33) of the dielectric layer (32). A CVD metal layer is then deposited onto the structure (30) to achieve selective deposition on the floor (42) of the aperture (38), while preferably also forming a highly oriented blanket layer (46) on the field (33). In another aspect of the invention, a thin, self-aligning layer is formed over a barrier layer prior to deposition of a conducting film there over. It is believed that the self-aligning layer enhances the reflectivity of the films by improving the crystal structure in the resulting film and provides improved electromigration performance by providing &lang&111&rang& crystal orientation. The process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the process occurs without the formation of oxides between the layers. <IMAGE>