| 摘要 |
PURPOSE:To obtain a bipolar transistor operating at the high speed by extending a base electrode layer from the surface of a base semiconductor layer to the surface of the first insulating layer part, and by extending an emitter electrode layer from the surface of an emitter semiconductor layer to the surface of the first insulating layer part through the surface of the second insulating layer part. CONSTITUTION:A base electrode layer 6 is extended at the opposite side to the side of an emitter electrode layer 7 from the surface of a base semiconductor layer 3 directly to the surface of first insulating layer part 8a of an insulating layer 8. The emitter electrode layer 7 is extended from the surface of an emitter semiconductor layer 4 to the surface of the first insulating part 8a through the second insulating part 8b of the insulating layer 8. As this configuration makes a base and collector junction area between the base semiconductor layer 3 and a mesa part 2b of a collector semiconductor layer 2 smaller sufficiently and also makes the base resistance value lower, its characteristics permit a bipolar transistor to be operated at the high speed. |
