| 发明名称 |
Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film |
| 摘要 |
A ferroelectric thin film includes a ferroelectric crystal containing Bi, Ti and O as constituent elements, the ratio Bi/Ti in the ferroelectric thin film being non-stoichiometric. Also described are a substrate provided with a ferroelectric thin film, a device having a capacitor structure for use in a ferroelectric memory device, a pyroelectric sensor device or a piezoelectric device, and a method for manufacturing a ferroelectric thin film. |
| 申请公布号 |
EP0781736(A3) |
申请公布日期 |
1997.09.10 |
| 申请号 |
EP19960309549 |
申请日期 |
1996.12.24 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KIJIMA, TAKESHI;MATSUNAGA, HIRONORI |
| 分类号 |
C01G23/00;C23C16/02;C23C16/40;H01L21/02;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L27/108;H01L29/788;H01L29/792;H01L37/02;H01L49/02 |
主分类号 |
C01G23/00 |
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