Semiconductor quantum well laser having a low threshold current density

摘要

The present invention gives rise to a 1.3 mu m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In1-xGaxAsyP1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 mu m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.