| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which an oxide layer is hard to form on the surface of an Al or Al-alloy film and whose property resistant to electro-migration is improved by a method wherein the Al or Al-alloy film is made to reflow, a high vacuum atmosphere is maintained until the deposition of an upper-layer Ti film is started, and the deposition of the upper-layer Ti film is started. SOLUTION: An insulating layer 12 provided with a contact hole by which a part of a conductive region is exposed on the bottom face is formed on a substrate 11, and an Al or Al-alloy film 16 is formed inside the contact hole and on the insulating layer 12. Under a high vacuum at a pressure of 5×10<-7> Torr or lower, the substrate 11 is heated, the Al or Al-alloy film 16 is made to reflow, a substrate temperature is set at 400 deg.C or higher, and an upper-layer Ti film 17 is deposited on the Al or Al-alloy film 16. In addition, after the reflow process and until the deposition process of the upper-layer Ti film, an atmosphere pressure is maintained at 5×10<-7> Torr or lower. As a result, it is possible to obtain a semiconductor device in which an oxide film is hard to form on the surface of the Al or Al-alloy film 16 and whose property resistant to electro-migration can be improved.
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