| 摘要 |
PCT No. PCT/US93/12623 Sec. 371 Date Jun. 20, 1995 Sec. 102(e) Date Jun. 20, 1995 PCT Filed Dec. 28, 1993 PCT Pub. No. WO94/14726 PCT Pub. Date Jul. 7, 1994A silicon carbide ceramic having crystalline grain boundary phases is prepared by heating a composition comprising silicon carbide, a silicate glass and a high metal content transition metal silicide, to a temperature of 1300 DEG C. to 2100 DEG C. under vacuum until oxygen is removed from the glass as SiO gas, and the glass that remains within the silicon carbide ceramic crystallizes.
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