Measuring method and exposure apparatus

摘要

A measuring method comprises a first step to expose by the irradiation of a predetermined energy ray onto the resist layer of a photosensitive board a first mask pattern having at least two linear pattern portions arranged substantially in axial symmetry with respect to a straight line in a predetermined first direction and inclined at a predetermined angle to the straight line in the first direction, a second step to overlap with the first mask pattern image exposed on the resist layer a second mask pattern formed by the linear patterns which extend in a second direction substantially perpendicular to the first direction by relatively driving the second mask pattern in a predetermined amount in the first direction for exposure, and a third step to measure an interval in the second direction between at least two wedge-shaped resist images formed by the overlapped portions of the first mask pattern and the second mask pattern. The difference between the measured value and a predetermined standard value of the interval in the second direction may be obtained to determined a positional deviation.