发明名称 |
Insulated gate static induction thyristor with a split gate type shorted cathode structure |
摘要 |
In a gate insulated static induction thyristor with a split gate type shorted cathode structure, a first gate of the split gate structure is used as a cathode short-circuit gate and the cathode region is formed in the second gate. A MOS structure is formed on the second gate as a control gate electrode isolated therefrom. Since the channel integration density is high, the area efficiency increases. The MOS gate structure suppresses the minority carrier (hole) storage effect to permit high-speed swtching of the thyristor, and the shorted cathode structure provides for increased maximum controllable current/voltage durability. The split gate structure can be used in combination with planar, buried, recessed and double gate structures.
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申请公布号 |
US5665987(A) |
申请公布日期 |
1997.09.09 |
申请号 |
US19950414346 |
申请日期 |
1995.03.31 |
申请人 |
TOYO DENKI SEIZO KABUSHIKI KAISHA;TAMAMUSHI, TAKASHIGE |
发明人 |
MURAOKA, KIMIHIRO;OHTSUBO, YOSHINOBU;HIGUCHI, TOSHIO;IGUCHI, MAKOTO;TAMAMUSHI, TAKASHIGE |
分类号 |
H01L29/74;H01L29/739;H01L29/749;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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