发明名称 |
Semiconductor light emitting device with defect decomposing and blocking layers |
摘要 |
A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
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申请公布号 |
US5665977(A) |
申请公布日期 |
1997.09.09 |
申请号 |
US19960691536 |
申请日期 |
1996.08.02 |
申请人 |
SONY CORPORATION |
发明人 |
ISHIBASHI, AKIRA;MATSUMOTO, SATOSHI;NAGAI, MASAHARU;ITO, SATOSHI;TOMIYA, SHIGETAKA;NAKANO, KAZUSHI;MORITA, ETSUO |
分类号 |
H01L33/06;H01L33/28;H01S5/30;H01S5/32;H01S5/347;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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